Panjit PJT7600_R1_00001 MOSFETs
Small Signal Field-Effect Transistor, 1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PJT7600_R1_00001
Detailed Description
Small Signal Field-Effect Transistor, 1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6
Package
SOT-363
Lifecycle Status
Active
Datasheet
PJT7600_R1_00001 Datasheet
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Technical Specifications
Panjit PJT7600_R1_00001 MOSFETs technical specifications.
General
Series
NFET-20TSNP
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1 A, 700 mA
Rds on Drain Source Resistance
150 mOhms, 325 mOhms
Related Parts Comparison (PJT7600_R1_00001 vs PJT7828_R1_00001 vs PJT138K_R1_00001 vs PJT7800_R1_00001)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | NFET-20TSNP | NFET-30TSMN | NFET-50TSMN | NFET-20TSMN |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-363 | SOT-363 | SOT-363 | SOT-363 |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.000265 oz | 0.000280 oz | 0.000265 oz | 0.000265 oz |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | -- | 2 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Fall Time | 31 ns, 23 ns | -- | 23 ns | 32 ns |
| ID Continuous Drain Current | 1 A, 700 mA | -- | 360 mA | 1 A |
| Pd Power Dissipation | 350 mW | -- | 236 mW | 350 mW |
| Action |
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PJT138K_R1_00001PanjitSmall Signal Field-Effect Transistor, 0.36A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, …
PJT7800_R1_00001PanjitSmall Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET