Panjit PJA3460_R1_00001 MOSFETs
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PJA3460_R1_00001
Detailed Description
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Package
SOT-23
Lifecycle Status
Active
Datasheet
PJA3460_R1_00001 Datasheet
Quick Jump:
Technical Specifications
Panjit PJA3460_R1_00001 MOSFETs technical specifications.
General
Series
NFET-60TMN
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
2.5 A
Rds on Drain Source Resistance
90 mOhms
Alternate Parts Comparison (PJA3460_R1_00001 vs PJA3441_R1_00001 vs PJA3441-AU_R1_000A1 vs PJA3415AE-AU_R1_000A1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| RoHS | Yes | -- | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| Fall Time | 6.4 ns | 10 ns | -- | 826 ns |
| ID Continuous Drain Current | 2.5 A | 3.1 A | -- | 4.3 A |
| Package | SOT-23 | -- | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 1.25 W | 1.25 W | -- | 1.25 W |
| Qg Gate Charge | 9.3 nC | 6 nC | -- | 24 nC |
| Rds on Drain Source Resistance | 90 mOhms | 88 mOhms | -- | 50 mOhms |
| Action |
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