Panjit GS1MF-LE_R1_00001 BJTs
Discrete Semiconductors--Transistors--IGBTs--IGBT Modules
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
GS1MF-LE_R1_00001
Base Model
Detailed Description
Discrete Semiconductors--Transistors--IGBTs--IGBT Modules
Lifecycle Status
Active
Datasheet
GS1MF-LE_R1_00001 Datasheet
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Related Parts Comparison (GS1MF-LE_R1_00001 vs GS1M-AU_R1_000A1 vs GS1G-AU_R1_000A1 vs GS1MWG_R1_00001)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package | -- | DO-214 | SMA (DO-214AC) | SMA-W-2 |
| Unit Weight | -- | 0.002395 oz | 0.002395 oz | 0.002395 oz |
| Mounting Type | -- | SMD/SMT | -- | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C |
| Configuration | -- | Single | -- | Single |
| If Forward Current | -- | 1 A | -- | 1 A |
| Ir Reverse Current | -- | 1 uA | -- | 1 uA |
| Max Surge Current | -- | 35 A | -- | 30 A |
| Maximum Diode Capacitance | -- | 12 pF | -- | 7 pF |
| Peak Reverse Voltage | -- | 1 kV | -- | 1 kV |
| Qualification | -- | AEC-Q101 | AEC-Q101 | -- |
| Vf Forward Voltage | -- | 1.1 V | -- | 1.1 V |
| Action |
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BC817-40-AU_R1_000A1PanjitSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
