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Panjit BC849CW_R1_00001 BJTs

Small Signal Bipolar Transistor,

18,000 ActivePanjitSOT323-3$0.04
BC849CW_R1_00001 SOT323-3 package illustration

Same model may have multiple batches, images only for reference.

BC849CW_R1_00001
Manufacturer
Part Number (MPN)
BC849CW_R1_00001
Detailed Description
Small Signal Bipolar Transistor,
Package
SOT323-3
Lifecycle Status
Active
Datasheet
PDF BC849CW_R1_00001 Datasheet
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Technical Specifications

Panjit BC849CW_R1_00001 BJTs technical specifications.

General

Series
GPT-02TAN
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Transistor Polarity
NPN
Configuration
Single
Collector Emitter Voltage Vceo Max
30 V
Collector Base Voltage Vcbo
30 V
Emitter Base Voltage Vebo
5 V
Collector Emitter Saturation Voltage
900 mV

Related Parts Comparison (BC849CW_R1_00001 vs BC817-40-AU_R1_000A1 vs BC846B-AU_R1_000A1 vs BC807-25-AU_R1_000A1)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesCompliantYesYes
PackageSOT323-3SOT-23SOT23-3SOT23-3
Unit Weight0.000176 oz0.000296 oz0.000296 oz0.000296 oz
Mounting TypeSMD/SMTSMD/SMTSMD/SMT--
Operating Temperature- 55°C ~ + 150°C- 55°C ~ + 150°C- 55°C ~ + 150°C--
Collector Base Voltage Vcbo30 V50 V80 V--
Collector Emitter Saturation Voltage900 mV700 mV600 mV--
Collector Emitter Voltage Vceo Max30 V45 V65 V--
ConfigurationSingleSingleSingle--
Continuous Collector Current100 mA500 mA100 mA--
Dc Collector Base Gain Hfe Min420250110--
Dc Current Gain Hfe Max800600220--
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