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onsemi TIP47G BJTs

NPN BJT 250V 1A 40W TO-220AB Transistor

63,000 ActiveonsemiTO-220AB$0.80
TIP47G TO-220AB package illustration

Same model may have multiple batches, images only for reference.

TIP47G
Manufacturer
Part Number (MPN)
TIP47G
Detailed Description
NPN BJT 250V 1A 40W TO-220AB Transistor
Package
TO-220AB
Lifecycle Status
Active
Datasheet
PDF TIP47G Datasheet
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Technical Specifications

onsemi TIP47G BJTs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
30 @ 300mA, 10V
Power Max
2 W
Frequency Transition
10MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
250 V

Alternate Parts Comparison (TIP47G vs TIP112G vs TIP120G vs TIP107G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max1mA2mA500µA50µA
Current Collector IC Max1 A2 A5 A8 A
Dc Current Gain Hfe Min IC Vce30 @ 300mA, 10V1000 @ 1A, 4V1000 @ 3A, 3V1000 @ 3A, 4V
Power Max2 W2 W2 W2 W
Transistor TypeNPNNPN - DarlingtonNPN - DarlingtonPNP - Darlington
Vce Saturation Max Ib IC1V @ 200mA, 1A2.5V @ 8mA, 2A4V @ 20mA, 5A2.5V @ 80mA, 8A
Voltage Collector Emitter Breakdown Max250 V100 V60 V100 V
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