onsemi TIP112G BJTs
NPN Darlington Transistor 100V 2A TO-220AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TIP112G
Detailed Description
NPN Darlington Transistor 100V 2A TO-220AB
Package
TO-220AB
Lifecycle Status
Active
Datasheet
TIP112G Datasheet
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Technical Specifications
onsemi TIP112G BJTs technical specifications.
General
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
2mA
Dc Current Gain Hfe Min IC Vce
1000 @ 1A, 4V
Power Max
2 W
Transistor Type
NPN - Darlington
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (TIP112G vs TIP47G vs TIP29BG vs TIP29CG)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 2mA | 1mA | 300µA | 300µA |
| Current Collector IC Max | 2 A | 1 A | 1 A | 1 A |
| Dc Current Gain Hfe Min IC Vce | 1000 @ 1A, 4V | 30 @ 300mA, 10V | 15 @ 1A, 4V | 15 @ 1A, 4V |
| Power Max | 2 W | 2 W | 2 W | 2 W |
| Transistor Type | NPN - Darlington | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 2.5V @ 8mA, 2A | 1V @ 200mA, 1A | 700mV @ 125mA, 1A | 700mV @ 125mA, 1A |
| Voltage Collector Emitter Breakdown Max | 100 V | 250 V | 80 V | 100 V |
| Frequency Transition | -- | 10MHz | 3MHz | 3MHz |
| Action |
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