onsemi SMMBTA56WT3G BJTs
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 10000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMMBTA56WT3G
Base Model
Detailed Description
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 10000-REEL
Package
SC-70
Lifecycle Status
Active
Datasheet
SMMBTA56WT3G Datasheet
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Technical Specifications
onsemi SMMBTA56WT3G BJTs technical specifications.
General
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
150 mW
Frequency Transition
50MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (SMMBTA56WT3G vs SMMBTA56WT1G vs SMUN5111T1G vs SMUN5114T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA | 100nA | 500nA | 500nA |
| Current Collector IC Max | 500 mA | 500 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 100mA, 1V | 100 @ 100mA, 1V | 35 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 150 mW | 150 mW | 202 mW | 202 mW |
| Transistor Type | PNP | PNP | PNP - Pre-Biased | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 10mA, 100mA | 250mV @ 10mA, 100mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 50 V | 50 V |
| Action |
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