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onsemi SMMBTA56WT1G BJTs

PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL

864,000 ActiveonsemiSMMBTA56WTSC-70$0.06
SMMBTA56WT1G - No Image Available

Same model may have multiple batches, images only for reference.

SMMBTA56WT1G
Manufacturer
Part Number (MPN)
SMMBTA56WT1G
Base Model
Detailed Description
PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
Package
SC-70
Lifecycle Status
Active
Datasheet
PDF SMMBTA56WT1G Datasheet
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Ordering Code Family

SMMBTA56WT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMBTA56WT1G BJTs technical specifications.

General

Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
150 mW
Frequency Transition
50MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (SMMBTA56WT1G vs SMMBTA56WT3G vs SMUN5111T1G vs SMUN5114T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-70, SOT-323--SC-70, SOT-323SC-70, SOT-323
Mounting TypeSurface Mount--Surface MountSurface Mount
Lifecycle StatusActive--ActiveActive
Current Collector Cutoff Max100nA--500nA500nA
Current Collector IC Max500 mA--100 mA100 mA
Dc Current Gain Hfe Min IC Vce100 @ 100mA, 1V--35 @ 5mA, 10V80 @ 5mA, 10V
DescriptionTRANS PNP 80V 0.5A SC70-3--TRANS PREBIAS PNP 50V SC70-3TRANS PREBIAS PNP 50V SC70-3
Detailed DescriptionBipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 150 mW Surface Mount SC-70-3 (SOT323)--Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
Power Max150 mW--202 mW202 mW
Transistor TypePNP--PNP - Pre-BiasedPNP - Pre-Biased
Vce Saturation Max Ib IC250mV @ 10mA, 100mA--250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max80 V--50 V50 V
Action

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