onsemi QRE1113 BJTs
Optical Switches, Reflective, Phototransistor Output Reflective Object Sensor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QRE1113
Detailed Description
Optical Switches, Reflective, Phototransistor Output Reflective Object Sensor
Package
4-DIP (0.157", 4.00mm)
Lifecycle Status
Active
Datasheet
QRE1113 Datasheet
Quick Jump:
Technical Specifications
onsemi QRE1113 BJTs technical specifications.
General
Package / Case
4-DIP
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 85°C
Lifecycle Status
Active
Current Dc Forward If Max
50 mA
Output Type
Phototransistor
Response Time
20µs, 20µs
Sensing Distance
0.039" (1mm)
Sensing Method
Reflective
Voltage Collector Emitter Breakdown Max
30 V
Alternate Parts Comparison (QRE1113 vs QRE1113GR vs MBT3906DW1T1G vs BC847CDW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 4-DIP | 4-SMD, Gull Wing | 6-TSSOP | 6-TSSOP |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 85°C | -40°C ~ 85°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Production | Production |
| Current Collector IC Max | 20 mA | 20 mA | 200mA | 100mA |
| Voltage Collector Emitter Breakdown Max | 30 V | 30 V | 40V | 45V |
| Action |
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