onsemi NXH35C120L2C2S1G BJTs
IGBT Module, CIB 1200 V, 35 A IGBT Converter and Inverter only, 6-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NXH35C120L2C2S1G
Detailed Description
IGBT Module, CIB 1200 V, 35 A IGBT Converter and Inverter only, 6-TUBE
Package
26-PowerDIP Module (1.199", 47.20mm)
Lifecycle Status
Obsolete
Datasheet
NXH35C120L2C2S1G Datasheet
Quick Jump:
Technical Specifications
onsemi NXH35C120L2C2S1G BJTs technical specifications.
General
Package / Case
26-PowerDIP Module
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Current Collector Cutoff Max
250 µA
Input Capacitance Cies Vce
8.33 nF @ 20 V
Input
Three Phase Bridge Rectifier
Ntc Thermistor
Yes
Configuration
Three Phase Inverter with Brake
Voltage Collector Emitter Breakdown Max
1200 V
Alternate Parts Comparison (NXH35C120L2C2S1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -40°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Production | Production | Production |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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