onsemi NVJS4151PT1G MOSFETs
20V P-Ch Trench MOSFET, 3.2A, 67mR, SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVJS4151PT1G
Detailed Description
20V P-Ch Trench MOSFET, 3.2A, 67mR, SMT
Package
SC-88/SC70-6/SOT-363
Lifecycle Status
Active
Datasheet
NVJS4151PT1G Datasheet
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Technical Specifications
onsemi NVJS4151PT1G MOSFETs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
10 nC @ 4.5 V
Vgs Max
±12V
Input Capacitance Ciss Max Vds
850 pF @ 10 V
Power Dissipation Max
1.2W (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)
Alternate Parts Comparison (NVJS4151PT1G vs NTJD5121NT2G vs 2N7002LT1G vs NTA4151PT1H)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 | SC-75, SOT-416 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 3.2A (Ta) | 295mA | 115mA (Tc) | 760mA (Tj) |
| Description | MOSFET P-CH 20V 3.2A SC88 | MOSFET 2N-CH 60V 0.295A SC88 | MOSFET N-CH 60V 115MA SOT23-3 | MOSFET P-CH 20V 760MA SC75 |
| Detailed Description | P-Channel 20 V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363 | Mosfet Array 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363 | N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236) | P-Channel 20 V 760mA (Tj) 301mW (Tj) Surface Mount SC-75, SOT-416 |
| Drain to Source Voltage Vdss | 20 V | 60V | 60 V | 20 V |
| Input Capacitance Ciss Max Vds | 850 pF @ 10 V | 26pF @ 20V | 50 pF @ 25 V | 156 pF @ 5 V |
| Rds on Max ID Vgs | 67mOhm @ 2.9A, 4.5V | 1.6Ohm @ 500mA, 10V | 7.5Ohm @ 500mA, 10V | 360mOhm @ 350mA, 4.5V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs Th Max ID | 1.2V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 1.2V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- |
| Action |
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