onsemi NVHL080N120SC1 MOSFETs
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVHL080N120SC1
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE
Package
TO-247-3
Lifecycle Status
Not For New Designs
Datasheet
NVHL080N120SC1 Datasheet
Quick Jump:
Technical Specifications
onsemi NVHL080N120SC1 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Not For New Designs
Gate Charge Qg Max Vgs
56 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
1670 pF @ 800 V
Power Dissipation Max
348W (Tc)
Fet Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Alternate Parts Comparison (NVHL080N120SC1 vs NVHL040N120SC1 vs FCH072N60 vs FCH190N65F-F155)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Not For New Designs | Active | Active | Active |
| Current Continuous Drain ID 25 C | 44A (Tc) | 60A (Tc) | 52A (Tc) | 20.6A (Tc) |
| Description | SICFET N-CH 1200V 44A TO247-3 | SICFET N-CH 1200V 60A TO247-3 | MOSFET N-CH 600V 52A TO247-3 | MOSFET N-CH 650V 20.6A TO247 |
| Detailed Description | N-Channel 1200 V 44A (Tc) 348W (Tc) Through Hole TO-247-3 | N-Channel 1200 V 60A (Tc) 348W (Tc) Through Hole TO-247-3 | N-Channel 600 V 52A (Tc) 481W (Tc) Through Hole TO-247-3 | N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-247-3 |
| Drain to Source Voltage Vdss | 1200 V | 1200 V | 600 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 20V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 56 nC @ 20 V | 106 nC @ 20 V | 125 nC @ 10 V | 78 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1670 pF @ 800 V | 1781 pF @ 800 V | 5890 pF @ 380 V | 3225 pF @ 100 V |
| Action |
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