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onsemi NTHL022N120M3S MOSFETs

SILICON CARBIDE (SIC) MOSFET ELI

13,950 ActiveonsemiTO-247-3$183.61
NTHL022N120M3S - No Image Available

Same model may have multiple batches, images only for reference.

NTHL022N120M3S
Manufacturer
Part Number (MPN)
NTHL022N120M3S
Detailed Description
SILICON CARBIDE (SIC) MOSFET ELI
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF NTHL022N120M3S Datasheet
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Technical Specifications

onsemi NTHL022N120M3S MOSFETs technical specifications.

General

Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.4V @ 20mA
Gate Charge Qg Max Vgs
139 nC @ 18 V
Vgs Max
+22V, -10V
Input Capacitance Ciss Max Vds
3130 pF @ 800 V
Fet Type
N-Channel
Power Dissipation Max
352W (Tc)

Alternate Parts Comparison (NTHL022N120M3S vs NTHL040N65S3F vs NTHL033N65S3HF vs NTHL027N65S3HF)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C68A (Tc)65A (Tc)70A (Tc)75A (Tc)
DescriptionSILICON CARBIDE (SIC) MOSFET ELIMOSFET N-CH 650V 65A TO247-3MOSFET N-CH 650V 70A TO247-3MOSFET N-CH 650V 75A TO247-3
Detailed DescriptionN-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-3N-Channel 650 V 65A (Tc) 446W (Tc) Through Hole TO-247-3N-Channel 650 V 70A (Tc) 500W (Tc) Through Hole TO-247-3N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-3
Drain to Source Voltage Vdss1200 V650 V650 V650 V
Drive Voltage Max Rds on Min Rds on18V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs139 nC @ 18 V158 nC @ 10 V188 nC @ 10 V225 nC @ 10 V
Input Capacitance Ciss Max Vds3130 pF @ 800 V5940 pF @ 400 V6720 pF @ 400 V7630 pF @ 400 V
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