onsemi NVBG080N120SC1 MOSFETs
SICFET N-CH 1200V 30A D2PAK-7
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVBG080N120SC1
Detailed Description
SICFET N-CH 1200V 30A D2PAK-7
Package
D2PAK-7
Lifecycle Status
Active
Datasheet
NVBG080N120SC1 Datasheet
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Technical Specifications
onsemi NVBG080N120SC1 MOSFETs technical specifications.
General
Series
NVBG080N120SC1
RoHS
Yes
Number of Channels
1 Channel
Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
56 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
1154 pF @ 800 V
Alternate Parts Comparison (NVBG080N120SC1 vs NVBG020N090SC1 vs NVBG020N120SC1 vs NVBG040N120SC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-8, D2PAK | TO-263-8, D2PAK | TO-263-8, D2PAK | TO-263-8, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Current Continuous Drain ID 25 C | 30A (Tc) | 9.8A (Ta), 112A (Tc) | 8.6A (Ta), 98A (Tc) | 60A (Tc) |
| Drain to Source Voltage Vdss | 1200 V | 900 V | 1200 V | 1200 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 15V | 20V | 20V |
| Fall Time | 9 ns | 13 ns | 9 ns | 9 ns |
| Action |
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