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onsemi NVBG020N120SC1 MOSFETs

SiC MOSFET, N-Ch, 1200V, 20mΩ, D2PAK-7L

3 ActiveonsemiNVBG020ND2PAK-7$102.81
NVBG020N120SC1 - No Image Available

Same model may have multiple batches, images only for reference.

NVBG020N120SC1
Manufacturer
Part Number (MPN)
NVBG020N120SC1
Base Model
Detailed Description
SiC MOSFET, N-Ch, 1200V, 20mΩ, D2PAK-7L
Package
D2PAK-7
Lifecycle Status
Active
Datasheet
PDF NVBG020N120SC1 Datasheet
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Ordering Code Family

NVBG020N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi NVBG020N120SC1 MOSFETs technical specifications.

General

Package / Case
TO-263-8, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
220 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
2943 pF @ 800 V
Power Dissipation Max
3.7W (Ta), 468W (Tc)
Fet Type
N-Channel
Technology
SiCFET (Silicon Carbide)

Alternate Parts Comparison (NVBG020N120SC1 vs NVBG020N090SC1 vs NVBG080N120SC1 vs NVBG040N120SC1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-8, D2PAKTO-263-8, D2PAKTO-263-8, D2PAKTO-263-8, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C8.6A (Ta), 98A (Tc)9.8A (Ta), 112A (Tc)30A (Tc)60A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss1200 V900 V1200 V1200 V
Drive Voltage Max Rds on Min Rds on20V15V20V20V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs220 nC @ 20 V200 nC @ 15 V56 nC @ 20 V106 nC @ 20 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
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