onsemi NTZS3151PT1G MOSFETs
P-Channel MOSFET, -20V, -950mA, 150mR, SOT-563
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTZS3151PT1G
Detailed Description
P-Channel MOSFET, -20V, -950mA, 150mR, SOT-563
Package
SOT-563
Lifecycle Status
Active
Datasheet
NTZS3151PT1G Datasheet
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Technical Specifications
onsemi NTZS3151PT1G MOSFETs technical specifications.
General
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
5.6 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
458 pF @ 16 V
Fet Type
P-Channel
Power Dissipation Max
170mW (Ta)
Alternate Parts Comparison (NTZS3151PT1G vs RUM002N02T2L vs NTJD5121NT2G vs 2N7002LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55 °C ~ 150 °C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Drain to Source Voltage Vdss | 20 V | 20 V | 60V | 60 V |
| Package / Case | SOT-563, SOT-666 | -- | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Current Continuous Drain ID 25 C | 860mA (Ta) | -- | 295mA | 115mA (Tc) |
| Description | MOSFET P-CH 20V 860MA SOT563 | -- | MOSFET 2N-CH 60V 0.295A SC88 | MOSFET N-CH 60V 115MA SOT23-3 |
| Detailed Description | P-Channel 20 V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563 | -- | Mosfet Array 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363 | N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236) |
| Input Capacitance Ciss Max Vds | 458 pF @ 16 V | -- | 26pF @ 20V | 50 pF @ 25 V |
| Rds on Max ID Vgs | 150mOhm @ 950mA, 4.5V | -- | 1.6Ohm @ 500mA, 10V | 7.5Ohm @ 500mA, 10V |
| Technology | MOSFET (Metal Oxide) | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs Th Max ID | 1V @ 250µA | -- | 2.5V @ 250µA | 2.5V @ 250µA |
| Action |
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