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onsemi NTZS3151PT1G MOSFETs

P-Channel MOSFET, -20V, -950mA, 150mR, SOT-563

274,708 ActiveonsemiSOT-563$0.19
NTZS3151PT1G SOT-563 package illustration

Same model may have multiple batches, images only for reference.

NTZS3151PT1G
Manufacturer
Part Number (MPN)
NTZS3151PT1G
Detailed Description
P-Channel MOSFET, -20V, -950mA, 150mR, SOT-563
Package
SOT-563
Lifecycle Status
Active
Datasheet
PDF NTZS3151PT1G Datasheet
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Technical Specifications

onsemi NTZS3151PT1G MOSFETs technical specifications.

General

Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
5.6 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
458 pF @ 16 V
Fet Type
P-Channel
Power Dissipation Max
170mW (Ta)

Related Parts Comparison (NTZS3151PT1G vs RUM002N02T2L vs NTJD5121NT2G vs 2N7002LT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55 °C ~ 150 °C-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveProductionActiveActive
Drain to Source Voltage Vdss20 V20 V60V60 V
TechnologyMOSFET (Metal Oxide)SiMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / CaseSOT-563, SOT-666--6-TSSOPTO-236-3, SC-59, SOT-23-3
Current Continuous Drain ID 25 C860mA (Ta)--295mA115mA (Tc)
Input Capacitance Ciss Max Vds458 pF @ 16 V--26pF @ 20V50 pF @ 25 V
Rds on Max ID Vgs150mOhm @ 950mA, 4.5V--1.6Ohm @ 500mA, 10V7.5Ohm @ 500mA, 10V
Vgs Th Max ID1V @ 250µA--2.5V @ 250µA2.5V @ 250µA
Configuration--Single2 N-Channel (Dual)Single
Package--SOT-23SOT-363-6SOT23-3
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