onsemi NTZS3151PT1G MOSFETs

Name: NTZS3151PT1G
Brand: onsemi
SKU: NTZS3151PT1G
Price: 0.1853 USD
Availability: InStock

P-Channel MOSFET, -20V, -950mA, 150mR, SOT-563

274,708 ActiveonsemiSOT-563$0.19

Same model may have multiple batches, images only for reference.

NTZS3151PT1G

Manufacturer

onsemi

Part Number (MPN)

NTZS3151PT1G

Technical Specifications

onsemi NTZS3151PT1G MOSFETs technical specifications.

General

Package / Case

SOT-563, SOT-666

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 150°C (TJ)

Lifecycle Status

Active

Vgs Th Max ID

1V @ 250µA

Gate Charge Qg Max Vgs

5.6 nC @ 4.5 V

Vgs Max

±8V

Input Capacitance Ciss Max Vds

458 pF @ 16 V

Fet Type

P-Channel

Power Dissipation Max

170mW (Ta)

Alternate Parts Comparison (NTZS3151PT1G vs RUM002N02T2L vs NTJD5121NT2G vs 2N7002LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	onsemiNTZS3151PT1G	ROHMRUM002N02T2L	onsemiNTJD5121NT2G	onsemi2N7002LT1G
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)	-55 °C ~ 150 °C	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Lifecycle Status	Active	Production	Active	Active
Drain to Source Voltage Vdss	20 V	20 V	60V	60 V
Technology	MOSFET (Metal Oxide)	Si	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Package / Case	SOT-563, SOT-666	--	6-TSSOP	TO-236-3, SC-59, SOT-23-3
Current Continuous Drain ID 25 C	860mA (Ta)	--	295mA	115mA (Tc)
Input Capacitance Ciss Max Vds	458 pF @ 16 V	--	26pF @ 20V	50 pF @ 25 V
Rds on Max ID Vgs	150mOhm @ 950mA, 4.5V	--	1.6Ohm @ 500mA, 10V	7.5Ohm @ 500mA, 10V
Vgs Th Max ID	1V @ 250µA	--	2.5V @ 250µA	2.5V @ 250µA
Configuration	--	Single	2 N-Channel (Dual)	Single
Package	--	SOT-23	SOT-363-6	SOT23-3
Action	RFQ	RFQ	RFQ	RFQ

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