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onsemi NTTFS5116PLTWG MOSFETs

Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL

201 Activeonsemi8-WDFN (3.3x3.3)$0.72
NTTFS5116PLTWG - No Image Available

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NTTFS5116PLTWG
Manufacturer
Part Number (MPN)
NTTFS5116PLTWG
Detailed Description
Single P-Channel Power MOSFET -60V, -20A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL
Package
8-WDFN (3.3x3.3)
Lifecycle Status
Active
Datasheet
PDF NTTFS5116PLTWG Datasheet
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Technical Specifications

onsemi NTTFS5116PLTWG MOSFETs technical specifications.

General

Package / Case
8-PowerWDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
3V @ 250µA
Gate Charge Qg Max Vgs
25 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1258 pF @ 30 V
Fet Type
P-Channel
Power Dissipation Max
3.2W (Ta), 40W (Tc)

Alternate Parts Comparison (NTTFS5116PLTWG vs NTTFS4C13NTAG vs NTTFS5C454NLTAG vs NTTFS6H850NTAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-PowerWDFN8-PowerWDFN8-PowerWDFN8-PowerWDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C5.7A (Ta)7.2A (Ta)20A (Ta), 85A (Tc)11A (Ta), 68A (Tc)
Drain to Source Voltage Vdss60 V30 V40 V80 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V4.5V, 10V4.5V, 10V6V, 10V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs25 nC @ 10 V7.8 nC @ 4.5 V18 nC @ 10 V19 nC @ 10 V
Input Capacitance Ciss Max Vds1258 pF @ 30 V770 pF @ 15 V1600 pF @ 25 V1140 pF @ 40 V
Power Dissipation Max3.2W (Ta), 40W (Tc)780mW (Ta), 21.5W (Tc)3.2W (Ta), 55W (Tc)3.2W (Ta), 107W (Tc)
Rds on Max ID Vgs52mOhm @ 6A, 10V9.4mOhm @ 30A, 10V3.8mOhm @ 20A, 10V9.5mOhm @ 10A, 10V
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