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onsemi NTTFS6H850NTAG MOSFETs

Single N−Channel Power MOSFET 80V, 68A, 9.5m?Ω, 1500-REEL

135,000 Activeonsemi8-WDFN (3.3x3.3)$0.51
NTTFS6H850NTAG 8-WDFN (3.3x3.3) package illustration

Same model may have multiple batches, images only for reference.

NTTFS6H850NTAG
Manufacturer
Part Number (MPN)
NTTFS6H850NTAG
Detailed Description
Single N−Channel Power MOSFET 80V, 68A, 9.5m?Ω, 1500-REEL
Package
8-WDFN (3.3x3.3)
Lifecycle Status
Active
Datasheet
PDF NTTFS6H850NTAG Datasheet
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Technical Specifications

onsemi NTTFS6H850NTAG MOSFETs technical specifications.

General

RoHS
Yes
Package / Case
8-PowerWDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 70µA
Gate Charge Qg Max Vgs
19 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
1140 pF @ 40 V
Fet Type
N-Channel

Related Parts Comparison (NTTFS6H850NTAG vs NTTFS4C13NTAG vs NTTFS5C454NLTAG vs NVTFS5124PLTWG)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case8-PowerWDFN8-PowerWDFN8-PowerWDFN8-PowerWDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C11A (Ta), 68A (Tc)7.2A (Ta)20A (Ta), 85A (Tc)2.4A (Ta)
Drain to Source Voltage Vdss80 V30 V40 V60 V
Drive Voltage Max Rds on Min Rds on6V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Fet TypeN-ChannelN-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs19 nC @ 10 V7.8 nC @ 4.5 V18 nC @ 10 V6 nC @ 10 V
Input Capacitance Ciss Max Vds1140 pF @ 40 V770 pF @ 15 V1600 pF @ 25 V250 pF @ 25 V
PackageWDFN-8WDFN8WDFN-8WDFN-8
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