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onsemi NTS4173PT1G MOSFETs

P-Channel JFET, -30V, -1.2A, 165mR, SOT-323

8,991 ActiveonsemiSC-70-3 (SOT323)$0.28
NTS4173PT1G SC-70-3 (SOT323) package illustration

Same model may have multiple batches, images only for reference.

NTS4173PT1G
Manufacturer
Part Number (MPN)
NTS4173PT1G
Detailed Description
P-Channel JFET, -30V, -1.2A, 165mR, SOT-323
Package
SC-70-3 (SOT323)
Lifecycle Status
Active
Datasheet
PDF NTS4173PT1G Datasheet
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Technical Specifications

onsemi NTS4173PT1G MOSFETs technical specifications.

General

Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1.5V @ 250µA
Gate Charge Qg Max Vgs
10.1 nC @ 10 V
Vgs Max
±12V
Input Capacitance Ciss Max Vds
430 pF @ 15 V
Fet Type
P-Channel
Power Dissipation Max
290mW (Ta)

Related Parts Comparison (NTS4173PT1G vs NTS4001NT3G vs NTS2101PT1G vs NTS4001NT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSC-70, SOT-323SC-70, SOT-323SC-70, SOT-323SC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C1.2A (Ta)270mA (Ta)1.4A (Ta)270mA (Ta)
Drain to Source Voltage Vdss30 V30 V8 V30 V
Drive Voltage Max Rds on Min Rds on2.5V, 10V2.5V, 4V1.8V, 4.5V2.5V, 4V
Fet TypeP-ChannelN-ChannelP-ChannelN-Channel
Gate Charge Qg Max Vgs10.1 nC @ 10 V1.3 nC @ 5 V6.4 nC @ 5 V1.3 nC @ 5 V
Input Capacitance Ciss Max Vds430 pF @ 15 V33 pF @ 5 V640 pF @ 8 V33 pF @ 5 V
Power Dissipation Max290mW (Ta)330mW (Ta)290mW (Ta)330mW (Ta)
Rds on Max ID Vgs150mOhm @ 1.2A, 10V1.5Ohm @ 10mA, 4V100mOhm @ 1A, 4.5V1.5Ohm @ 10mA, 4V
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