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onsemi NTS4001NT1G MOSFETs

MOSFET N-CH 30V 0.27A 1R SC-70

8,630 ActiveonsemiNTS4001NTSC-70-3 (SOT323)$0.13
NTS4001NT1G SC-70-3 (SOT323) package illustration

Same model may have multiple batches, images only for reference.

NTS4001NT1G
Manufacturer
Part Number (MPN)
NTS4001NT1G
Base Model
Detailed Description
MOSFET N-CH 30V 0.27A 1R SC-70
Package
SC-70-3 (SOT323)
Lifecycle Status
Active
Datasheet
PDF NTS4001NT1G Datasheet
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Ordering Code Family

NTS4001NT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi NTS4001NT1G MOSFETs technical specifications.

General

Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1.5V @ 100µA
Gate Charge Qg Max Vgs
1.3 nC @ 5 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
33 pF @ 5 V
Fet Type
N-Channel
Power Dissipation Max
330mW (Ta)

Related Parts Comparison (NTS4001NT1G vs NTS4001NT3G vs NTS2101PT1G vs NTS4173PT1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSC-70, SOT-323SC-70, SOT-323SC-70, SOT-323SC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C270mA (Ta)270mA (Ta)1.4A (Ta)1.2A (Ta)
Drain to Source Voltage Vdss30 V30 V8 V30 V
Drive Voltage Max Rds on Min Rds on2.5V, 4V2.5V, 4V1.8V, 4.5V2.5V, 10V
Fet TypeN-ChannelN-ChannelP-ChannelP-Channel
Gate Charge Qg Max Vgs1.3 nC @ 5 V1.3 nC @ 5 V6.4 nC @ 5 V10.1 nC @ 10 V
Input Capacitance Ciss Max Vds33 pF @ 5 V33 pF @ 5 V640 pF @ 8 V430 pF @ 15 V
Power Dissipation Max330mW (Ta)330mW (Ta)290mW (Ta)290mW (Ta)
Rds on Max ID Vgs1.5Ohm @ 10mA, 4V1.5Ohm @ 10mA, 4V100mOhm @ 1A, 4.5V150mOhm @ 1.2A, 10V
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

NX3020NAKWNX3020NAKWNexperia
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N-channel enhancement mode MOSFET for small signal applications.

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