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onsemi NTP6412ANG MOSFETs

N-CH Power MOSFET 100V 58A TO-220AB Through Hole

10 ActiveonsemiTO-220$8.27
NTP6412ANG - No Image Available

Same model may have multiple batches, images only for reference.

NTP6412ANG
Manufacturer
Part Number (MPN)
NTP6412ANG
Detailed Description
N-CH Power MOSFET 100V 58A TO-220AB Through Hole
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF NTP6412ANG Datasheet
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Technical Specifications

onsemi NTP6412ANG MOSFETs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
100 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
3500 pF @ 25 V
Fet Type
N-Channel
Power Dissipation Max
167W (Tc)

Alternate Parts Comparison (NTP6412ANG vs NTP7D3N15MC vs NTP5D0N15MC vs NTP2955G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C58A (Tc)12.1A (Ta), 101A (Tc)15A (Ta), 139A (Tc)2.4A (Ta)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss100 V150 V150 V60 V
Fet TypeN-ChannelN-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs100 nC @ 10 V53 nC @ 10 V75 nC @ 10 V14 nC @ 10 V
Input Capacitance Ciss Max Vds3500 pF @ 25 V4250 pF @ 75 V6300 pF @ 75 V700 pF @ 25 V
Power Dissipation Max167W (Tc)2.4W (Ta), 166W (Tc)2.4W (Ta), 214W (Tc)2.4W (Ta), 62.5W (Tc)
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