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onsemi MTP50P03HDLG MOSFETs

P-Channel MOSFET -30V -50A 25mR TO-220 Logic Level

50onsemiTO-220$0.50
MTP50P03HDLG - No Image Available

Same model may have multiple batches, images only for reference.

MTP50P03HDLG
Manufacturer
Part Number (MPN)
MTP50P03HDLG
Detailed Description
P-Channel MOSFET -30V -50A 25mR TO-220 Logic Level
Package
TO-220
Lifecycle Status
Obsolete
Datasheet
PDF MTP50P03HDLG Datasheet
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Technical Specifications

onsemi MTP50P03HDLG MOSFETs technical specifications.

General

Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
2V @ 250µA
Gate Charge Qg Max Vgs
100 nC @ 5 V
Vgs Max
±15V
Input Capacitance Ciss Max Vds
4900 pF @ 25 V
Fet Type
P-Channel
Power Dissipation Max
125W (Tc)

Alternate Parts Comparison (MTP50P03HDLG vs MTP12P10G vs MTP23P06VG vs NTP7D3N15MC)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteObsoleteObsoleteActive
Current Continuous Drain ID 25 C50A (Tc)12A (Tc)23A (Tc)12.1A (Ta), 101A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss30 V100 V60 V150 V
Fet TypeP-ChannelP-ChannelP-ChannelN-Channel
Gate Charge Qg Max Vgs100 nC @ 5 V50 nC @ 10 V50 nC @ 10 V53 nC @ 10 V
Input Capacitance Ciss Max Vds4900 pF @ 25 V920 pF @ 25 V1620 pF @ 25 V4250 pF @ 75 V
Power Dissipation Max125W (Tc)75W (Tc)90W (Tc)2.4W (Ta), 166W (Tc)
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