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onsemi NTNS3A65PZT5G MOSFETs

Single P Channel Small Signal MOSFET -20V,- 281mA, 1.3Ω, xDFN3 1X0.6, 0.35P, 8000-REEL

4,148onsemiSOT-883 (XDFN3) (1x0.6)$1.19
NTNS3A65PZT5G - No Image Available

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NTNS3A65PZT5G
Manufacturer
Part Number (MPN)
NTNS3A65PZT5G
Detailed Description
Single P Channel Small Signal MOSFET -20V,- 281mA, 1.3Ω, xDFN3 1X0.6, 0.35P, 8000-REEL
Package
SOT-883 (XDFN3) (1x0.6)
Lifecycle Status
Obsolete
Datasheet
PDF NTNS3A65PZT5G Datasheet
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Technical Specifications

onsemi NTNS3A65PZT5G MOSFETs technical specifications.

General

Package / Case
3-XFDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
1.1 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
44 pF @ 10 V
Fet Type
P-Channel
Power Dissipation Max
155mW (Ta)

Alternate Parts Comparison (NTNS3A65PZT5G vs NTNS0K8N021ZTCG vs NTNS3164NZT5G vs NTNS3193NZT5G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case3-XFDFN3-XFDFN3-XFDFN3-XFLGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteObsoleteActiveActive
Current Continuous Drain ID 25 C281mA (Ta)220mA (Ta)361mA (Ta)224mA (Ta)
Drain to Source Voltage Vdss20 V20 V20 V20 V
Drive Voltage Max Rds on Min Rds on1.5V, 4.5V1.5V, 4.5V1.5V, 4.5V1.5V, 4.5V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance Ciss Max Vds44 pF @ 10 V12.3 pF @ 15 V24 pF @ 10 V15.8 pF @ 15 V
Power Dissipation Max155mW (Ta)125mW (Ta)155mW (Ta)120mW (Ta)
Rds on Max ID Vgs1.3Ohm @ 200mA, 4.5V1.5Ohm @ 100mA, 4.5V700mOhm @ 200mA, 4.5V1.4Ohm @ 100mA, 4.5V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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