onsemi NTMT045N065SC1 MOSFETs
SILICON CARBIDE (SIC) MOSFET - 3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTMT045N065SC1
Detailed Description
SILICON CARBIDE (SIC) MOSFET - 3
Package
4-TDFN (8x8)
Lifecycle Status
Active
Datasheet
NTMT045N065SC1 Datasheet
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Technical Specifications
onsemi NTMT045N065SC1 MOSFETs technical specifications.
General
Series
NTMT045N065SC1
RoHS
Yes
Number of Channels
1 Channel
Package / Case
4-PowerTSFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.3V @ 8mA
Gate Charge Qg Max Vgs
105 nC @ 18 V
Vgs Max
+22V, -8V
Alternate Parts Comparison (NTMT045N065SC1 vs NTMT190N65S3H vs NTMT185N60S5H vs BSS138LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 4-PowerTSFN | 4-PowerTSFN | 4-PowerTSFN | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 55A (Tc) | 16A (Tc) | 15A (Tc) | 200mA (Ta) |
| Drain to Source Voltage Vdss | 650 V | 650 V | 600 V | 50 V |
| Drive Voltage Max Rds on Min Rds on | 15V, 18V | 10V | 10V | 5V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance Ciss Max Vds | 1870 pF @ 325 V | 1600 pF @ 400 V | 1350 pF @ 400 V | 50 pF @ 25 V |
| Power Dissipation Max | 187W (Tc) | 129W (Tc) | 116W (Tc) | 225mW (Ta) |
| Rds on Max ID Vgs | 50mOhm @ 25A, 18V | 190mOhm @ 8A, 10V | 185mOhm @ 7.5A, 10V | 3.5Ohm @ 200mA, 5V |
| Technology | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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