onsemi NTMS5P02R2G MOSFETs
P-Channel Power MOSFET, -20V, -5.4A, 33mΩ, SOIC-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTMS5P02R2G
Detailed Description
P-Channel Power MOSFET, -20V, -5.4A, 33mΩ, SOIC-8
Package
SOIC-8
Lifecycle Status
Active
Datasheet
NTMS5P02R2G Datasheet
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Technical Specifications
onsemi NTMS5P02R2G MOSFETs technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1.25V @ 250µA
Gate Charge Qg Max Vgs
35 nC @ 4.5 V
Vgs Max
±10V
Input Capacitance Ciss Max Vds
1900 pF @ 16 V
Fet Type
P-Channel
Power Dissipation Max
790mW (Ta)
Alternate Parts Comparison (NTMS5P02R2G vs NTMS4177PR2G vs NTMS4807NR2G vs NTMS7N03R2G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | -- | 8-SOIC | 8-SOIC |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | -- | Obsolete | Active |
| Current Continuous Drain ID 25 C | 3.95A (Ta) | -- | 9.1A (Ta) | 4.8A (Ta) |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Drain to Source Voltage Vdss | 20 V | -- | 30 V | 30 V |
| Drive Voltage Max Rds on Min Rds on | 2.5V, 4.5V | -- | 4.5V, 10V | 4.5V, 10V |
| Fet Type | P-Channel | -- | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 35 nC @ 4.5 V | -- | 24 nC @ 4.5 V | 43 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1900 pF @ 16 V | -- | 2900 pF @ 24 V | 1190 pF @ 25 V |
| Action |
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