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onsemi NTMD6P02R2G MOSFETs

Dual P-Channel JFET -20V -6A 33mΩ SOIC-8

150,000 ActiveonsemiSOIC-8$1.02
NTMD6P02R2G - No Image Available

Same model may have multiple batches, images only for reference.

NTMD6P02R2G
Manufacturer
Part Number (MPN)
NTMD6P02R2G
Detailed Description
Dual P-Channel JFET -20V -6A 33mΩ SOIC-8
Package
SOIC-8
Lifecycle Status
Active
Datasheet
PDF NTMD6P02R2G Datasheet
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Technical Specifications

onsemi NTMD6P02R2G MOSFETs technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1.2V @ 250µA
Gate Charge Qg Max Vgs
35nC @ 4.5V
Input Capacitance Ciss Max Vds
1700pF @ 16V
Power Max
750mW
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)

Alternate Parts Comparison (NTMD6P02R2G vs NTMD4184PFR2G vs NTMD4N03R2G vs NTMD4840NR2G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC--8-SOIC8-SOIC
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveObsolete
Configuration2 P-Channel (Dual)--2 N-Channel (Dual)2 N-Channel (Dual)
Current Continuous Drain ID 25 C4.8A--4A4.5A
Description--------
Detailed Description--------
Drain to Source Voltage Vdss20V--30V30V
Fet FeatureLogic Level Gate--Logic Level GateLogic Level Gate
Gate Charge Qg Max Vgs35nC @ 4.5V--16nC @ 10V9.5nC @ 10V
Input Capacitance Ciss Max Vds1700pF @ 16V--400pF @ 20V520pF @ 15V
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