onsemi NTLJD3115PT1G MOSFETs
Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTLJD3115PT1G
Detailed Description
Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6
Package
DFN6
Lifecycle Status
Active
Datasheet
NTLJD3115PT1G Datasheet
Quick Jump:
Technical Specifications
onsemi NTLJD3115PT1G MOSFETs technical specifications.
General
Package / Case
6-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
6.2nC @ 4.5V
Input Capacitance Ciss Max Vds
531pF @ 10V
Power Max
710mW
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
Alternate Parts Comparison (NTLJD3115PT1G vs NTLJD4116NT1G vs NTLJD3119CTBG vs 2N7002LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-WDFN Exposed Pad | -- | 6-WDFN Exposed Pad | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | -- | Active | Active |
| Current Continuous Drain ID 25 C | 2.3A | -- | 2.6A, 2.3A | 115mA (Tc) |
| Drain to Source Voltage Vdss | 20V | -- | 20V | 60 V |
| Input Capacitance Ciss Max Vds | 531pF @ 10V | -- | 271pF @ 10V | 50 pF @ 25 V |
| Rds on Max ID Vgs | 100mOhm @ 2A, 4.5V | -- | 65mOhm @ 3.8A, 4.5V | 7.5Ohm @ 500mA, 10V |
| Technology | MOSFET (Metal Oxide) | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs Th Max ID | 1V @ 250µA | -- | 1V @ 250µA | 2.5V @ 250µA |
| Action |
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