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onsemi NTLJD3115PT1G MOSFETs

Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6

108,000 ActiveonsemiDFN6$0.48
NTLJD3115PT1G - No Image Available

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NTLJD3115PT1G
Manufacturer
Part Number (MPN)
NTLJD3115PT1G
Detailed Description
Dual P-Channel MOSFET -20V, -4.1A, 100mR, DFN6
Package
DFN6
Lifecycle Status
Active
Datasheet
PDF NTLJD3115PT1G Datasheet
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Technical Specifications

onsemi NTLJD3115PT1G MOSFETs technical specifications.

General

Package / Case
6-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
6.2nC @ 4.5V
Input Capacitance Ciss Max Vds
531pF @ 10V
Power Max
710mW
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)

Alternate Parts Comparison (NTLJD3115PT1G vs NTLJD4116NT1G vs NTLJD3119CTBG vs 2N7002LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-WDFN Exposed Pad--6-WDFN Exposed PadTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C2.3A--2.6A, 2.3A115mA (Tc)
Drain to Source Voltage Vdss20V--20V60 V
Input Capacitance Ciss Max Vds531pF @ 10V--271pF @ 10V50 pF @ 25 V
Rds on Max ID Vgs100mOhm @ 2A, 4.5V--65mOhm @ 3.8A, 4.5V7.5Ohm @ 500mA, 10V
TechnologyMOSFET (Metal Oxide)--MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs Th Max ID1V @ 250µA--1V @ 250µA2.5V @ 250µA
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