onsemi NTHS4101PT1G MOSFETs
P-Channel MOSFET, -20V, -4.8A, 34mΩ, SMD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTHS4101PT1G
Detailed Description
P-Channel MOSFET, -20V, -4.8A, 34mΩ, SMD
Package
ChipFET™
Lifecycle Status
Active
Datasheet
NTHS4101PT1G Datasheet
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Technical Specifications
onsemi NTHS4101PT1G MOSFETs technical specifications.
General
Package / Case
8-SMD, Flat Leads
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
1.5V @ 250µA
Gate Charge Qg Max Vgs
35 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
2100 pF @ 16 V
Fet Type
P-Channel
Power Dissipation Max
1.3W (Ta)
Alternate Parts Comparison (NTHS4101PT1G vs NTHS5441T1G vs NTJD5121NT2G vs 2N7002LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SMD, Flat Leads | 8-SMD, Flat Leads | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Continuous Drain ID 25 C | 4.8A (Tj) | 3.9A (Ta) | 295mA | 115mA (Tc) |
| Drain to Source Voltage Vdss | 20 V | 20 V | 60V | 60 V |
| Input Capacitance Ciss Max Vds | 2100 pF @ 16 V | 710 pF @ 5 V | 26pF @ 20V | 50 pF @ 25 V |
| Rds on Max ID Vgs | 34mOhm @ 4.8A, 4.5V | 46mOhm @ 3.9A, 4.5V | 1.6Ohm @ 500mA, 10V | 7.5Ohm @ 500mA, 10V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs Th Max ID | 1.5V @ 250µA | 1.2V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Drive Voltage Max Rds on Min Rds on | 1.8V, 4.5V | 2.5V, 4.5V | -- | 5V, 10V |
| Fet Type | P-Channel | P-Channel | -- | N-Channel |
| Action |
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