onsemi NTHL080N120SC1 MOSFETs
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTHL080N120SC1
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
NTHL080N120SC1 Datasheet
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Technical Specifications
onsemi NTHL080N120SC1 MOSFETs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4.3V @ 5mA
Gate Charge Qg Max Vgs
56 nC @ 20 V
Vgs Max
+25V, -15V
Input Capacitance Ciss Max Vds
1670 pF @ 800 V
Fet Type
N-Channel
Power Dissipation Max
348W (Tc)
Alternate Parts Comparison (NTHL080N120SC1 vs NTHL040N65S3F vs NTHL033N65S3HF vs NTHL027N65S3HF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Continuous Drain ID 25 C | 44A (Tc) | 65A (Tc) | 70A (Tc) | 75A (Tc) |
| Drain to Source Voltage Vdss | 1200 V | 650 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 20V | 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 56 nC @ 20 V | 158 nC @ 10 V | 188 nC @ 10 V | 225 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1670 pF @ 800 V | 5940 pF @ 400 V | 6720 pF @ 400 V | 7630 pF @ 400 V |
| Power Dissipation Max | 348W (Tc) | 446W (Tc) | 500W (Tc) | 595W (Tc) |
| Rds on Max ID Vgs | 110mOhm @ 20A, 20V | 40mOhm @ 32.5A, 10V | 33mOhm @ 35A, 10V | 27.4mOhm @ 35A, 10V |
| Action |
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