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onsemi NTHL040N120SC1 MOSFETs

Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE

1 ActiveonsemiNTHL040N$43.62
NTHL040N120SC1 - No Image Available

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NTHL040N120SC1
Manufacturer
Part Number (MPN)
NTHL040N120SC1
Base Model
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE
Lifecycle Status
Active
Datasheet
PDF NTHL040N120SC1 Datasheet
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Ordering Code Family

NTHL040N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Alternate Parts Comparison (NTHL040N120SC1 vs NTHL040N65S3F vs NTHL033N65S3HF vs NTHL027N65S3HF)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Series--SuperFET® IIIFRFET®, SuperFET® IIIFRFET®, SuperFET® III
Package / Case--TO-247-3TO-247-3TO-247-3
Mounting Type--Through HoleThrough HoleThrough Hole
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Continuous Drain ID 25 C--65A (Tc)70A (Tc)75A (Tc)
Description--MOSFET N-CH 650V 65A TO247-3MOSFET N-CH 650V 70A TO247-3MOSFET N-CH 650V 75A TO247-3
Detailed Description--N-Channel 650 V 65A (Tc) 446W (Tc) Through Hole TO-247-3N-Channel 650 V 70A (Tc) 500W (Tc) Through Hole TO-247-3N-Channel 650 V 75A (Tc) 595W (Tc) Through Hole TO-247-3
Drain to Source Voltage Vdss--650 V650 V650 V
Drive Voltage Max Rds on Min Rds on--10V10V10V
Fet Type--N-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs--158 nC @ 10 V188 nC @ 10 V225 nC @ 10 V
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