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onsemi NTHL040N120SC1 MOSFETs

Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE

1 ActiveonsemiNTHL040NTO-247-3$43.62
NTHL040N120SC1 TO-247-3 package illustration

Same model may have multiple batches, images only for reference.

NTHL040N120SC1
Manufacturer
Part Number (MPN)
NTHL040N120SC1
Base Model
Detailed Description
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF NTHL040N120SC1 Datasheet
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Ordering Code Family

NTHL040N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi NTHL040N120SC1 MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Technology
SiC
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
1.2 kV
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
56 mOhms
Vgs Gate Source Voltage
- 15 V, + 25 V

Alternate Parts Comparison (NTHL040N120SC1 vs NTHL040N65S3F vs NTHL033N65S3HF vs NTHL027N65S3HF)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature- 55°C ~ + 175°C-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologySiCMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Series--SuperFET® IIIFRFET®, SuperFET® IIIFRFET®, SuperFET® III
Package / Case--TO-247-3TO-247-3TO-247-3
Lifecycle Status--ActiveActiveActive
Current Continuous Drain ID 25 C--65A (Tc)70A (Tc)75A (Tc)
Drain to Source Voltage Vdss--650 V650 V650 V
Drive Voltage Max Rds on Min Rds on--10V10V10V
Fet Type--N-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs--158 nC @ 10 V188 nC @ 10 V225 nC @ 10 V
Input Capacitance Ciss Max Vds--5940 pF @ 400 V6720 pF @ 400 V7630 pF @ 400 V
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