onsemi NTB004N10G MOSFETs
N-Ch MOSFET, 100V, 201A, D2PAK, TO-263AB
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NTB004N10G
Detailed Description
N-Ch MOSFET, 100V, 201A, D2PAK, TO-263AB
Package
TO-263 (D2PAK)
Lifecycle Status
Active
Datasheet
NTB004N10G Datasheet
Quick Jump:
Technical Specifications
onsemi NTB004N10G MOSFETs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 500µA
Gate Charge Qg Max Vgs
175 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
11900 pF @ 50 V
Fet Type
N-Channel
Power Dissipation Max
340W (Tc)
Alternate Parts Comparison (NTB004N10G vs BBS3002-DL-1E vs FDB86563-F085 vs FDB42AN15A0)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Obsolete |
| Current Continuous Drain ID 25 C | 201A (Ta) | 100A (Ta) | 110A (Tc) | 5A (Ta), 35A (Tc) |
| Drain to Source Voltage Vdss | 100 V | 60 V | 60 V | 150 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 4V, 10V | 10V | 6V, 10V |
| Fet Type | N-Channel | P-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 175 nC @ 10 V | 280 nC @ 10 V | 163 nC @ 10 V | 39 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 11900 pF @ 50 V | 13200 pF @ 20 V | 10100 pF @ 30 V | 2150 pF @ 25 V |
| Power Dissipation Max | 340W (Tc) | 90W (Tc) | 333W (Tc) | 150W (Tc) |
| Rds on Max ID Vgs | 4.2mOhm @ 100A, 10V | 5.8mOhm @ 50A, 10V | 1.8mOhm @ 80A, 10V | 42mOhm @ 12A, 10V |
| Action |
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