onsemi BBS3002-DL-1E MOSFETs
P-Channel Power MOSFET, -60V, -100A, 5.8mΩ, D2PAK / TO-263-2L, 800-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BBS3002-DL-1E
Detailed Description
P-Channel Power MOSFET, -60V, -100A, 5.8mΩ, D2PAK / TO-263-2L, 800-REEL
Package
TO-263 (D2PAK)
Lifecycle Status
Obsolete
Datasheet
BBS3002-DL-1E Datasheet
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Technical Specifications
onsemi BBS3002-DL-1E MOSFETs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Gate Charge Qg Max Vgs
280 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
13200 pF @ 20 V
Power Dissipation Max
90W (Tc)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)
Alternate Parts Comparison (BBS3002-DL-1E vs FDB86563-F085 vs FDB42AN15A0 vs HUF75545S3ST)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Obsolete | Active | Obsolete | Active |
| Current Continuous Drain ID 25 C | 100A (Ta) | 110A (Tc) | 5A (Ta), 35A (Tc) | 75A (Tc) |
| Description | MOSFET P-CH 60V 100A D2PAK | MOSFET N-CH 60V 110A D2PAK | MOSFET N-CH 150V 5A/35A TO263AB | MOSFET N-CH 80V 75A D2PAK |
| Detailed Description | P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount TO-263 (D2PAK) | N-Channel 60 V 110A (Tc) 333W (Tc) Surface Mount TO-263 (D2PAK) | N-Channel 150 V 5A (Ta), 35A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK) | N-Channel 80 V 75A (Tc) 270W (Tc) Surface Mount TO-263 (D2PAK) |
| Drain to Source Voltage Vdss | 60 V | 60 V | 150 V | 80 V |
| Drive Voltage Max Rds on Min Rds on | 4V, 10V | 10V | 6V, 10V | 10V |
| Fet Type | P-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 280 nC @ 10 V | 163 nC @ 10 V | 39 nC @ 10 V | 235 nC @ 20 V |
| Input Capacitance Ciss Max Vds | 13200 pF @ 20 V | 10100 pF @ 30 V | 2150 pF @ 25 V | 3750 pF @ 25 V |
| Action |
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