onsemi NSVMUN5132T1G BJTs
PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVMUN5132T1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
Package
SC-70, SOT-323
Lifecycle Status
Active
Datasheet
NSVMUN5132T1G Datasheet
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Technical Specifications
onsemi NSVMUN5132T1G BJTs technical specifications.
General
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
15 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
202 mW
Transistor Type
PNP - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA
Alternate Parts Comparison (NSVMUN5132T1G vs NSVMUN5237T1G vs MCH3914-7-TL-H vs MMBT2907AWT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Power Max | 202 mW | 202 mW | 300 mW | 150 mW |
| Current Collector IC Max | 100 mA | 100 mA | -- | 600 mA |
| Dc Current Gain Hfe Min IC Vce | 15 @ 5mA, 10V | 80 @ 5mA, 10V | -- | 100 @ 150mA, 10V |
| Transistor Type | PNP - Pre-Biased | NPN - Pre-Biased | -- | PNP |
| Vce Saturation Max Ib IC | 250mV @ 1mA, 10mA | 250mV @ 5mA, 10mA | -- | 1.6V @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | -- | 60 V |
| Action |
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