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onsemi MMBT3906WT1G BJTs

General Purpose Bipolar Transistor PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL

9,120 ActiveonsemiSC-70, SOT-323$0.08
MMBT3906WT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT3906WT1G
Manufacturer
Part Number (MPN)
MMBT3906WT1G
Detailed Description
General Purpose Bipolar Transistor PNP Bipolar Transistor, SC-70 (SOT-323) 3 LEAD, 3000-REEL
Package
SC-70, SOT-323
Lifecycle Status
Active
Datasheet
PDF MMBT3906WT1G Datasheet
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Technical Specifications

onsemi MMBT3906WT1G BJTs technical specifications.

General

Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 10mA, 1V
Power Max
150 mW
Frequency Transition
250MHz
Transistor Type
PNP
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
40 V

Alternate Parts Comparison (MMBT3906WT1G vs MMBT2907AWT1G vs MCH3914-7-TL-H vs NSVMUN5237T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-70, SOT-323SC-70, SOT-323SC-70, SOT-323SC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS PNP 40V 0.2A SC70-3TRANS PNP 60V 0.6A SC70-3JFET N-CH 50MA SC70FL/MCPH3TRANS PREBIAS NPN 50V SC70-3
Detailed DescriptionBipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 150 mW Surface Mount SC-70-3 (SOT323)Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 150 mW Surface Mount SC-70-3 (SOT323)JFET N-Channel 50 mA 300 mW Surface Mount 3-MCPHPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 202 mW Surface Mount SC-70-3 (SOT323)
Power Max150 mW150 mW300 mW202 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)--
Current Collector IC Max200 mA600 mA--100 mA
Dc Current Gain Hfe Min IC Vce100 @ 10mA, 1V100 @ 150mA, 10V--80 @ 5mA, 10V
Transistor TypePNPPNP--NPN - Pre-Biased
Vce Saturation Max Ib IC400mV @ 5mA, 50mA1.6V @ 50mA, 500mA--250mV @ 5mA, 10mA
Voltage Collector Emitter Breakdown Max40 V60 V--50 V
Action

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