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onsemi NSVMMBT5401WT1G BJTs

High Voltage PNP Bipolar Transistor PNP High Voltage Transistor, 3000-REEL

100 ActiveonsemiSC-70, SOT-323$0.69
NSVMMBT5401WT1G SC-70, SOT-323 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT5401WT1G
Manufacturer
Part Number (MPN)
NSVMMBT5401WT1G
Detailed Description
High Voltage PNP Bipolar Transistor PNP High Voltage Transistor, 3000-REEL
Package
SC-70, SOT-323
Lifecycle Status
Active
Datasheet
PDF NSVMMBT5401WT1G Datasheet
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Technical Specifications

onsemi NSVMMBT5401WT1G BJTs technical specifications.

General

Series
MMBT5401W
RoHS
Yes
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
400 mW
Frequency Transition
300MHz
Grade
Automotive
Transistor Type
PNP

Alternate Parts Comparison (NSVMMBT5401WT1G vs NSVMMBT4401WT1G vs MCH3914-7-TL-H vs MUN5233T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-70, SOT-323SC-70, SOT-323SC-70, SOT-323SC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
PackageSOT-323SOT-323SOT-323SC-70-3
Power Max400 mW150 mW300 mW202 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)--
Current Collector Cutoff Max50nA (ICBO)100nA--500nA
Current Collector IC Max500 mA600 mA--100 mA
Dc Current Gain Hfe Min IC Vce60 @ 10mA, 5V100 @ 150mA, 1V--80 @ 5mA, 10V
Transistor TypePNPNPN--NPN - Pre-Biased
Vce Saturation Max Ib IC500mV @ 5mA, 50mA750mV @ 50mA, 500mA--250mV @ 1mA, 10mA
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