onsemi MUN5312DW1T2G BJTs
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MUN5312DW1T2G
Base Model
Detailed Description
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Package
SC-88
Lifecycle Status
Active
Datasheet
MUN5312DW1T2G Datasheet
Quick Jump:
Technical Specifications
onsemi MUN5312DW1T2G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
60 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
385mW
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V
Alternate Parts Comparison (MUN5312DW1T2G vs MUN5312DW1T1G vs MUN5211T1G vs MUN5314DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -- | -55 °C ~ 150 °C | -- |
| Number of Pins | -- | -- | 3 | -- |
| RoHS | -- | -- | Compliant | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | -- | Compliant | -- |
| Collector Emitter Breakdown Voltage | -- | -- | 50 V | -- |
| Collector Emitter Voltage Vceo | -- | -- | 50 V | -- |
| Contact Plating | -- | -- | Tin | -- |
| Continuous Collector Current | -- | -- | 100 mA | -- |
| Current Rating | -- | -- | 100 mA | -- |
| Element Configuration | -- | -- | Single | -- |
| Halogen Free | -- | -- | Halogen Free | -- |
| Action |
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