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onsemi MUN5236T1G BJTs

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal

1,566,000 ActiveonsemiSC-70$0.03RoHS
MUN5236T1G SC-70 package illustration

Same model may have multiple batches, images only for reference.

MUN5236T1G
Manufacturer
Part Number (MPN)
MUN5236T1G
Detailed Description
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN, BIP General Purpose Small Signal
Package
SC-70
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MUN5236T1G Datasheet
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Technical Specifications

onsemi MUN5236T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
100 kOhms
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
202 mW

Alternate Parts Comparison (MUN5236T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-70, SOT-323SC-70, SOT-3236-TSSOPSC-70, SOT-323
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveProductionActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100 mA100 mA100mA100 mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
Power Max202 mW202 mW250mW202 mW
Resistor Base R1100 kOhms10 kOhms10kOhms100 kOhms
Resistor Emitter Base R2100 kOhms10 kOhms47kOhms100 kOhms
Transistor TypeNPN - Pre-BiasedNPN - Pre-Biased1 NPN, 1 PNP - Pre-Biased (Dual)PNP - Pre-Biased
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max50 V50 V50V50 V
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