onsemi MUN5131T1G BJTs
PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MUN5131T1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), SC-70 (SOT-323) 3 LEAD, 3000-REEL
Package
SC-70
Lifecycle Status
Active
Datasheet
MUN5131T1G Datasheet
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Technical Specifications
onsemi MUN5131T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SC-70, SOT-323
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
2.2 kOhms
Dc Current Gain Hfe Min IC Vce
8 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
PNP - Pre-Biased
Power Max
202 mW
Alternate Parts Comparison (MUN5131T1G vs MUN5211T1G vs MUN5314DW1T1G vs MUN5136T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-70, SOT-323 | SC-70, SOT-323 | 6-TSSOP | SC-70, SOT-323 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100 mA | 100 mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 8 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 202 mW | 202 mW | 250mW | 202 mW |
| Resistor Base R1 | 2.2 kOhms | 10 kOhms | 10kOhms | 100 kOhms |
| Resistor Emitter Base R2 | 2.2 kOhms | 10 kOhms | 47kOhms | 100 kOhms |
| Transistor Type | PNP - Pre-Biased | NPN - Pre-Biased | 1 NPN, 1 PNP - Pre-Biased (Dual) | PNP - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 5mA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 50V | 50 V |
| Action |
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