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onsemi MMBT4403LT1G BJTs

PNP BJT Transistor 40V 0.6A 300mW SOT-23

577,082 ActiveonsemiMMBT4403LTSOT-23$0.02
MMBT4403LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT4403LT1G
Manufacturer
Part Number (MPN)
MMBT4403LT1G
Base Model
Detailed Description
PNP BJT Transistor 40V 0.6A 300mW SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBT4403LT1G Datasheet
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Ordering Code Family

MMBT4403LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBT4403LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 40V 0.6A SOT23-3
Detailed Description
Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 2V
Power Max
300 mW
Frequency Transition
200MHz
Transistor Type
PNP

Alternate Parts Comparison (MMBT4403LT1G vs MMBT4403LT1 vs MMBT4403LT3G vs MMBT5551LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Collector IC Max600 mA--600 mA600 mA
Dc Current Gain Hfe Min IC Vce100 @ 150mA, 2V--100 @ 150mA, 2V80 @ 10mA, 5V
DescriptionTRANS PNP 40V 0.6A SOT23-3--TRANS PNP 40V 0.6A SOT23-3TRANS NPN 160V 0.6A SOT23-3
Detailed DescriptionBipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3 (TO-236)--Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Power Max300 mW--300 mW225 mW
Transistor TypePNP--PNPNPN
Vce Saturation Max Ib IC750mV @ 50mA, 500mA--750mV @ 50mA, 500mA200mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max40 V--40 V160 V
Action

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