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onsemi MMBT2222ALT1G BJTs

NPN BJT Transistor 40V 0.6A 300MHz SOT-23

1,200,445 ActiveonsemiMMBT2222ALTSOT-23$0.02
MMBT2222ALT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT2222ALT1G
Manufacturer
Part Number (MPN)
MMBT2222ALT1G
Base Model
Detailed Description
NPN BJT Transistor 40V 0.6A 300MHz SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBT2222ALT1G Datasheet
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Ordering Code Family

MMBT2222ALT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBT2222ALT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
225 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
40 V

Alternate Parts Comparison (MMBT2222ALT1G vs MMBT2222ALT1 vs MMBT2222ALT3G vs MMBT5551LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3--TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Collector Cutoff Max10nA (ICBO)--10nA (ICBO)100nA
Current Collector IC Max600 mA--600 mA600 mA
Dc Current Gain Hfe Min IC Vce100 @ 150mA, 10V--100 @ 150mA, 10V80 @ 10mA, 5V
DescriptionTRANS NPN 40V 0.6A SOT23-3--TRANS NPN 40V 0.6A SOT23-3TRANS NPN 160V 0.6A SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 225 mW Surface Mount SOT-23-3 (TO-236)--Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW--300 mW225 mW
Transistor TypeNPN--NPNNPN
Vce Saturation Max Ib IC1V @ 50mA, 500mA--1V @ 50mA, 500mA200mV @ 5mA, 50mA
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