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onsemi MJL21196G BJTs

NPN BJT 250V 16A TO-264 Power Transistor

42,000 ActiveonsemiTO-264$5.37
MJL21196G TO-264 package illustration

Same model may have multiple batches, images only for reference.

MJL21196G
Manufacturer
Part Number (MPN)
MJL21196G
Detailed Description
NPN BJT 250V 16A TO-264 Power Transistor
Package
TO-264
Lifecycle Status
Active
Datasheet
PDF MJL21196G Datasheet
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Technical Specifications

onsemi MJL21196G BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-264-3, TO-264AA
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
25 @ 8A, 5V
Power Max
200 W
Frequency Transition
4MHz
Transistor Type
NPN
Current Collector IC Max
16 A

Alternate Parts Comparison (MJL21196G vs MJL21195G vs MJL4302AG vs MJL3281AG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-264-3, TO-264AATO-264-3, TO-264AATO-264-3, TO-264AATO-264-3, TO-264AA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100µA100µA100µA50µA (ICBO)
Current Collector IC Max16 A16 A15 A15 A
Dc Current Gain Hfe Min IC Vce25 @ 8A, 5V25 @ 8A, 5V80 @ 5A, 5V75 @ 5A, 5V
Frequency Transition4MHz4MHz35MHz30MHz
Power Max200 W200 W230 W200 W
Transistor TypeNPNPNPPNPNPN
Vce Saturation Max Ib IC4V @ 3.2A, 16A4V @ 3.2A, 16A1V @ 800mA, 8A3V @ 1A, 10A
Voltage Collector Emitter Breakdown Max250 V250 V350 V260 V
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