onsemi MJ802G BJTs
30A 90V NPN BJT Power Transistor, TO-204
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJ802G
Detailed Description
30A 90V NPN BJT Power Transistor, TO-204
Package
TO-204AA, TO-3
Lifecycle Status
Active
Datasheet
MJ802G Datasheet
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Technical Specifications
onsemi MJ802G BJTs technical specifications.
General
Package / Case
TO-204AA, TO-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
25 @ 7.5A, 2V
Power Max
200 W
Frequency Transition
2MHz
Transistor Type
NPN
Current Collector IC Max
30 A
Voltage Collector Emitter Breakdown Max
90 V
Alternate Parts Comparison (MJ802G vs MJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Package / Case | TO-204AA, TO-3 | TO-252-3, DPAK |
| Mounting Type | Through Hole | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production |
| Current Collector Cutoff Max | 1mA (ICBO) | 50µA |
| Current Collector IC Max | 30 A | 10 A |
| Dc Current Gain Hfe Min IC Vce | 25 @ 7.5A, 2V | 20 @ 4A, 4V |
| Power Max | 200 W | 1.75 W |
| Transistor Type | NPN | NPN |
| Vce Saturation Max Ib IC | 800mV @ 750mA, 7.5A | 8V @ 3.3A, 10A |
| Voltage Collector Emitter Breakdown Max | 90 V | 60 V |
| Action |
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