onsemi MJ11016G BJTs
120V 30A NPN Darlington Power BJT, TO-204
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJ11016G
Detailed Description
120V 30A NPN Darlington Power BJT, TO-204
Package
TO-204
Lifecycle Status
Active
Datasheet
MJ11016G Datasheet
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Technical Specifications
onsemi MJ11016G BJTs technical specifications.
General
Package / Case
TO-204AA, TO-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN DARL 120V 30A TO204
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 120 V 30 A 4MHz 200 W Through Hole TO-204 (TO-3)
Dc Current Gain Hfe Min IC Vce
1000 @ 20A, 5V
Power Max
200 W
Frequency Transition
4MHz
Transistor Type
NPN - Darlington
Alternate Parts Comparison (MJ11016G vs MJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Operating Temperature | -55°C ~ 200°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 3 |
| RoHS | -- | Compliant |
| Lifecycle Status | Active | Active |
| China ROHS | -- | Non-Compliant |
| Collector Base Voltage Vcbo | -- | 70 V |
| Collector Emitter Breakdown Voltage | -- | 60 V |
| Collector Emitter Saturation Voltage | -- | 1.1 V |
| Collector Emitter Voltage Vceo | -- | 60 V |
| Current Rating | -- | 10 A |
| Element Configuration | -- | Single |
| Emitter Base Voltage Vebo | -- | 5 V |
| Action |
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