onsemi FFSP20120A Rectifier Diodes
SiC Schottky Diodes 1200V 20A Silicon Carbide Schtky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSP20120A
Detailed Description
SiC Schottky Diodes 1200V 20A Silicon Carbide Schtky Diode
Package
TO-220-2
Lifecycle Status
Active
Datasheet
FFSP20120A Datasheet
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Technical Specifications
onsemi FFSP20120A Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
1220pF @ 1V, 100KHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V
Current Average Rectified IO
20A
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (FFSP20120A vs FFSP10120A vs FFSP0865A vs MBR1645G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 20A | 10A | 13A | 16A |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 200 µA @ 1200 V | 200 µA @ 650 V | 200 µA @ 45 V |
| Description | DIODE SIL CARB 1200V 20A TO220L | DIODE SIL CARB 1200V 10A TO220L | DIODE SIL CARB 650V 13A TO220-2 | DIODE SCHOTTKY 45V 16A TO2202 |
| Detailed Description | Diode 1200 V 20A Through Hole TO-220-2L | Diode 1200 V 10A Through Hole TO-220-2L | Diode 650 V 13A Through Hole TO-220-2 | Diode 45 V 16A Through Hole TO-220-2 |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 1200 V | 650 V | 45 V |
| Voltage Forward Vf Max If | 1.75 V @ 20 A | 1.75 V @ 10 A | 1.75 V @ 8 A | 630 mV @ 16 A |
| Action |
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