onsemi FFSP0865A Rectifier Diodes
SiC Diode - 650V, 8A, TO-220-2, 800-TUBE

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSP0865A
Detailed Description
SiC Diode - 650V, 8A, TO-220-2, 800-TUBE
Package
TO-220-2
Lifecycle Status
Active
Datasheet
FFSP0865A Datasheet
Quick Jump:
Technical Specifications
onsemi FFSP0865A Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
200 µA @ 650 V
Capacitance Vr F
463pF @ 1V, 100kHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
13A
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (FFSP0865A vs FFSP10120A vs FFSP20120A vs MBR1645G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 13A | 10A | 20A | 16A |
| Current Reverse Leakage Vr | 200 µA @ 650 V | 200 µA @ 1200 V | 200 µA @ 1200 V | 200 µA @ 45 V |
| Description | DIODE SIL CARB 650V 13A TO220-2 | DIODE SIL CARB 1200V 10A TO220L | DIODE SIL CARB 1200V 20A TO220L | DIODE SCHOTTKY 45V 16A TO2202 |
| Detailed Description | Diode 650 V 13A Through Hole TO-220-2 | Diode 1200 V 10A Through Hole TO-220-2L | Diode 1200 V 20A Through Hole TO-220-2L | Diode 45 V 16A Through Hole TO-220-2 |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 1200 V | 1200 V | 45 V |
| Voltage Forward Vf Max If | 1.75 V @ 8 A | 1.75 V @ 10 A | 1.75 V @ 20 A | 630 mV @ 16 A |
| Action |
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