onsemi FFSP10120A Rectifier Diodes
SiC Schottky Diodes TranSic_HV
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSP10120A
Detailed Description
SiC Schottky Diodes TranSic_HV
Package
TO-220-2
Lifecycle Status
Active
Datasheet
FFSP10120A Datasheet
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Technical Specifications
onsemi FFSP10120A Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE SIL CARB 1200V 10A TO220L
Detailed Description
Diode 1200 V 10A Through Hole TO-220-2L
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
612pF @ 1V, 100kHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V
Alternate Parts Comparison (FFSP10120A vs FFSP0865A vs FFSP20120A vs MSR1560G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 10A | 13A | 20A | 15A |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 200 µA @ 650 V | 200 µA @ 1200 V | 15 µA @ 600 V |
| Description | DIODE SIL CARB 1200V 10A TO220L | DIODE SIL CARB 650V 13A TO220-2 | DIODE SIL CARB 1200V 20A TO220L | DIODE STANDARD 600V 15A TO2202 |
| Detailed Description | Diode 1200 V 10A Through Hole TO-220-2L | Diode 650 V 13A Through Hole TO-220-2 | Diode 1200 V 20A Through Hole TO-220-2L | Diode 600 V 15A Through Hole TO-220-2 |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Standard |
| Voltage Dc Reverse Vr Max | 1200 V | 650 V | 1200 V | 600 V |
| Voltage Forward Vf Max If | 1.75 V @ 10 A | 1.75 V @ 8 A | 1.75 V @ 20 A | 1.8 V @ 15 A |
| Action |
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