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onsemi FFSH4065BDN-F085 Rectifier Diodes

Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Auto SiC 650V, 450-TUBE

14 ActiveonsemiTO-247-3$12.35
FFSH4065BDN-F085 TO-247-3 package illustration

Same model may have multiple batches, images only for reference.

FFSH4065BDN-F085
Manufacturer
Part Number (MPN)
FFSH4065BDN-F085
Detailed Description
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Auto SiC 650V, 450-TUBE
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF FFSH4065BDN-F085 Datasheet
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Technical Specifications

onsemi FFSH4065BDN-F085 Rectifier Diodes technical specifications.

General

RoHS
Yes
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Current Reverse Leakage Vr
40 µA @ 650 V
Capacitance Vr F
866pF @ 1V, 100kHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky

Alternate Parts Comparison (FFSH4065BDN-F085 vs FFSH20120ADN-F155 vs FFSH30120ADN-F155 vs FFSH20120A)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-2
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveObsolete
ConfigurationDual Anode Common CathodeDual Anode Common CathodeDual Anode Common CathodeSingle
Current Reverse Leakage Vr40 µA @ 650 V200 µA @ 1200 V200 µA @ 1200 V200 µA @ 1200 V
PackageTO-247-3TO-247-3TO-247-3TO-247-2
Pd Power Dissipation127 W150 W195 W273 W
SpeedZero Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V1200 V1200 V1200 V
Voltage Forward Vf Max If1.7 V @ 20 A1.75 V @ 10 A1.75 V @ 15 A1.75 V @ 20 A
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