onsemi FFSH4065BDN-F085 Rectifier Diodes
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Auto SiC 650V, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSH4065BDN-F085
Detailed Description
Automotive Silicon Carbide (SiC) Schottky Diode, 650 V Auto SiC 650V, 450-TUBE
Package
TO-247-3
Lifecycle Status
Active
Datasheet
FFSH4065BDN-F085 Datasheet
Quick Jump:
Technical Specifications
onsemi FFSH4065BDN-F085 Rectifier Diodes technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE SIL CARB 650V 20A TO247-3
Detailed Description
Diode 650 V 20A Through Hole TO-247-3
Current Reverse Leakage Vr
40 µA @ 650 V
Capacitance Vr F
866pF @ 1V, 100kHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky
Alternate Parts Comparison (FFSH4065BDN-F085 vs FFSH20120ADN-F155 vs FFSH30120ADN-F155 vs FFSH20120A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Reverse Leakage Vr | 40 µA @ 650 V | 200 µA @ 1200 V | 200 µA @ 1200 V | 200 µA @ 1200 V |
| Description | DIODE SIL CARB 650V 20A TO247-3 | DIODE ARR SIC 1200V 10A TO247-3 | DIODE ARR SIC 1200V 15A TO247-3 | DIODE SIL CARB 1200V 30A TO247-2 |
| Detailed Description | Diode 650 V 20A Through Hole TO-247-3 | Diode Array 1 Pair Common Cathode 1200 V 10A (DC) Through Hole TO-247-3 | Diode Array 1 Pair Common Cathode 1200 V 15A (DC) Through Hole TO-247-3 | Diode 1200 V 30A Through Hole TO-247-2 |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 1200 V | 1200 V | 1200 V |
| Voltage Forward Vf Max If | 1.7 V @ 20 A | 1.75 V @ 10 A | 1.75 V @ 15 A | 1.75 V @ 20 A |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -- |
| Action |
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