onsemi FFSH20120ADN-F155 Rectifier Diodes
SiC Schottky Diodes 1200V SiC SBD 20A
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSH20120ADN-F155
Detailed Description
SiC Schottky Diodes 1200V SiC SBD 20A
Package
TO-247-3
Lifecycle Status
Active
Datasheet
FFSH20120ADN-F155 Datasheet
Quick Jump:
Technical Specifications
onsemi FFSH20120ADN-F155 Rectifier Diodes technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE ARR SIC 1200V 10A TO247-3
Detailed Description
Diode Array 1 Pair Common Cathode 1200 V 10A (DC) Through Hole TO-247-3
Voltage Forward Vf Max If
1.75 V @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Operating Temperature Junction
-55°C ~ 175°C
Diode Configuration
1 Pair Common Cathode
Alternate Parts Comparison (FFSH20120ADN-F155 vs FFSH20120A vs FFSH3065A vs FFSH4065BDN-F085)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-2 | TO-247-2 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 200 µA @ 1200 V | 200 µA @ 650 V | 40 µA @ 650 V |
| Description | DIODE ARR SIC 1200V 10A TO247-3 | DIODE SIL CARB 1200V 30A TO247-2 | DIODE SIL CARB 650V 26A TO247-2 | DIODE SIL CARB 650V 20A TO247-3 |
| Detailed Description | Diode Array 1 Pair Common Cathode 1200 V 10A (DC) Through Hole TO-247-3 | Diode 1200 V 30A Through Hole TO-247-2 | Diode 650 V 26A Through Hole TO-247-2 | Diode 650 V 20A Through Hole TO-247-3 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 1200 V | 650 V | 650 V |
| Operating Temperature Junction | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Voltage Forward Vf Max If | 1.75 V @ 10 A | 1.75 V @ 20 A | -- | 1.7 V @ 20 A |
| Capacitance Vr F | -- | 1220pF @ 1V, 100KHz | 1705pF @ 1V, 100kHz | 866pF @ 1V, 100kHz |
| Action |
More Parts in Rectifier Diodes
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
FFSH4065BDN-F085onsemiAutomotive Silicon Carbide (SiC) Schottky Diode, 650 V Auto SiC 650V, 450-TUBE
