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onsemi FFSH20120ADN-F155 Rectifier Diodes

SiC Schottky Diodes 1200V SiC SBD 20A

16 ActiveonsemiTO-247-3$27.54
FFSH20120ADN-F155 TO-247-3 package illustration

Same model may have multiple batches, images only for reference.

FFSH20120ADN-F155
Manufacturer
Part Number (MPN)
FFSH20120ADN-F155
Detailed Description
SiC Schottky Diodes 1200V SiC SBD 20A
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF FFSH20120ADN-F155 Datasheet
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Technical Specifications

onsemi FFSH20120ADN-F155 Rectifier Diodes technical specifications.

General

Series
FFSH20120A
RoHS
Yes
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Voltage Forward Vf Max If
1.75 V @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Operating Temperature Junction
-55°C ~ 175°C

Alternate Parts Comparison (FFSH20120ADN-F155 vs FFSH20120A vs FFSH3065A vs FFSH4065BDN-F085)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-2TO-247-2TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveObsoleteActiveActive
Current Reverse Leakage Vr200 µA @ 1200 V200 µA @ 1200 V200 µA @ 650 V40 µA @ 650 V
SpeedFast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max1200 V1200 V650 V650 V
RoHSYesYes--Yes
ConfigurationDual Anode Common CathodeSingle--Dual Anode Common Cathode
Operating Temperature Junction-55°C ~ 175°C---55°C ~ 175°C-55°C ~ 175°C
PackageTO-247-3TO-247-2--TO-247-3
Pd Power Dissipation150 W273 W--127 W
Action

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