onsemi FFSH30120ADN-F155 Rectifier Diodes
SiC Diode, 1200V, 30A, TO-247-2, 450-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSH30120ADN-F155
Detailed Description
SiC Diode, 1200V, 30A, TO-247-2, 450-TUBE
Package
TO-247-3
Lifecycle Status
Active
Datasheet
FFSH30120ADN-F155 Datasheet
Quick Jump:
Technical Specifications
onsemi FFSH30120ADN-F155 Rectifier Diodes technical specifications.
General
Series
FFSH30120ADN
RoHS
Yes
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Voltage Forward Vf Max If
1.75 V @ 15 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (FFSH30120ADN-F155 vs FFSH20120A vs FFSH3065A vs FFSH4065BDN-F085)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-2 | TO-247-2 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 200 µA @ 1200 V | 200 µA @ 650 V | 40 µA @ 650 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 1200 V | 650 V | 650 V |
| RoHS | Yes | Yes | -- | Yes |
| Configuration | Dual Anode Common Cathode | Single | -- | Dual Anode Common Cathode |
| Operating Temperature Junction | -55°C ~ 175°C | -- | -55°C ~ 175°C | -55°C ~ 175°C |
| Package | TO-247-3 | TO-247-2 | -- | TO-247-3 |
| Pd Power Dissipation | 195 W | 273 W | -- | 127 W |
| Action |
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