onsemi FFSB20120A Rectifier Diodes
SiC Diode, 1200V, 20A, D2PAK, 800-REEL

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSB20120A
Detailed Description
SiC Diode, 1200V, 20A, D2PAK, 800-REEL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
FFSB20120A Datasheet
Quick Jump:
Technical Specifications
onsemi FFSB20120A Rectifier Diodes technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
1220pF @ 1V, 100KHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V
Current Average Rectified IO
32A
Operating Temperature Junction
-55°C ~ 175°C
Alternate Parts Comparison (FFSB20120A vs FFSB10120A-F085 vs FFSB3065B-F085 vs 1N4148WS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Capacitance | -- | -- | -- | 4 pF |
| Operating Temperature | -- | -- | -- | -55 °C ~ 150 °C |
| Number of Pins | -- | -- | -- | 2 |
| RoHS | -- | -- | -- | Compliant |
| Lifecycle Status | Active | Active | Active | Production |
| Average Rectified Current | -- | -- | -- | 150 mA |
| China ROHS | -- | -- | -- | Compliant |
| Contact Plating | -- | -- | -- | Tin |
| Element Configuration | -- | -- | -- | Single |
| Export Control Classification Number ECCN Code | -- | -- | -- | -- |
| Forward Current | -- | -- | -- | 150 mA |
| Action |
More Parts in Rectifier Diodes
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