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onsemi FFSB20120A Rectifier Diodes

SiC Diode, 1200V, 20A, D2PAK, 800-REEL

280 ActiveonsemiTO-263-3, D2PAK (2 Leads + Tab), TO-263AB$13.47
FFSB20120A TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package illustration

Same model may have multiple batches, images only for reference.

FFSB20120A
Manufacturer
Part Number (MPN)
FFSB20120A
Detailed Description
SiC Diode, 1200V, 20A, D2PAK, 800-REEL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
PDF FFSB20120A Datasheet
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Technical Specifications

onsemi FFSB20120A Rectifier Diodes technical specifications.

General

RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 175°C
Lifecycle Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
1220pF @ 1V, 100KHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V

Alternate Parts Comparison (FFSB20120A vs FFSB10120A-F085 vs FFSB3065B-F085 vs 1N4148WS)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKSC-90, SOD-323F
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveProduction
Capacitance Vr F1220pF @ 1V, 100KHz612pF @ 1V, 100kHz1280pF @ 1V, 100kHz4pF @ 0V, 1MHz
Current Average Rectified IO32A21A73A150mA
Current Reverse Leakage Vr200 µA @ 1200 V200 µA @ 1200 V40 µA @ 650 V5 µA @ 75 V
Operating Temperature Junction-55°C ~ 175°C-55°C ~ 175°C-55°C ~ 175°C150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Small Signal =< 200mA (Io), Any Speed
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkyStandard
Voltage Dc Reverse Vr Max1200 V1200 V650 V75 V
Voltage Forward Vf Max If1.75 V @ 20 A1.75 V @ 10 A1.7 V @ 30 A1 V @ 10 mA
RoHSYes--YesCompliant
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